X-On Electronics has gained recognition as a prominent supplier of IPN95R2K0P7ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPN95R2K0P7ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPN95R2K0P7ATMA1 Infineon

IPN95R2K0P7ATMA1 electronic component of Infineon
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See Product Specifications
Part No.IPN95R2K0P7ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 7W; PG-SOT223
Datasheet: IPN95R2K0P7ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.053 ea
Line Total: USD 1.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4601

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2481
10 : USD 1.0887
25 : USD 0.9772
100 : USD 0.7667
250 : USD 0.7588
500 : USD 0.7436
1000 : USD 0.715
3000 : USD 0.715

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.053
10 : USD 0.9126
100 : USD 0.8095
500 : USD 0.7039
1000 : USD 0.5184
5000 : USD 0.4712

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 3.6863
10 : USD 1.3801
100 : USD 1.0332

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.05
5 : USD 0.868
25 : USD 0.756
26 : USD 0.63
72 : USD 0.588

   
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Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
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Power Dissipation
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We are delighted to provide the IPN95R2K0P7ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPN95R2K0P7ATMA1 and other electronic components in the MOSFETs category and beyond.

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IPN95R2K0P7 MOSFET PG-SOT223 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineons over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E reduced Q , C , and C DS(on) oss g iss oss Best-in-class SOT-223 R DS(on) Best-in-class V(GS)th of 3V and smallest V (GS)th variation of 0.5V Integrated Zener Diode ESD protection Best-in-class CoolMOS quality and reliability Fully optimized portfolio Drain Pin 2 Benefits *1 Gate Best-in-class performance Pin 1 *2 Enabling higher power density designs, BOM savings and lower assembly costs Source *1: Internal body diode *2: Integrated ESD diode Easy to drive and to parallel Pin 3 Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential applications Recommended for flyback topologies for LED Lighting, low power Chargers and Adapters, Smart Meter, AUX power and Industrial power. Also suitable for PFC stage in Consumer and Solar applications. Product Validation: Fully qualified acc. JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 950 V DS j=25C R 2 DS(on),max Qg,typ 10 nC ID 4 A E 500V 0.9 J oss V 3 V GS(th),typ ESD class (HBM) 2 - Type / Ordering Code Package Marking Related Links IPN95R2K0P7 PG-SOT223 95R2K0 see Appendix A Final Data Sheet 1 Rev. 2.0, 2018-06-01950V CoolMOS P7 SJ Power Device IPN95R2K0P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2018-06-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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