Type IPP060N06N TM OptiMOS Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. V 60 V DS 100% avalanche tested R 6.0 mW DS(on),max Superior thermal resistance I 45 A D N-channel Q nC OSS 32 1) Qualified according to JEDEC for target applications Q (0V..10V) nC G 27 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 PG-TO220-3 Type Package Marking IPP060N06N PG-TO220-3 060N06N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I V =10 V, T =25C Continuous drain current 45 A D GS C V =10 V, T =100C 45 GS C V =10 V, T =25C, GS C 17 R =50K/W thJA 2) I T =25C 180 Pulsed drain current D,pulse C 3) E I =45A, R =25W 60 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.2.2 page 1 2012-12-20IPP060N06N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 83 W tot C T =25 C, A 3.0 R =50K/W thJA Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 1.8 K/W thJC R Device on PCB minimal footprint - - 62 thJA 4) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =36A 2.1 2.8 3.3 GS(th) DS GS D V =60V, V =0V, DS GS Zero gate voltage drain current I - 0.5 1 A DSS T =25C j V =60V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =45A - 5.2 6 mW DS(on) GS D V =6V, I =12A - 6.7 9 GS D R Gate resistance - 1.5 2.3 W G V >2 I R , DS D DS(on)max g Transconductance 36 73 - S fs I =45A D Rev.2.2 page 2 2012-12-20