Id Q IPB090N06N3 G IPP093N06N3 G %& 3 Power-Transistor Product Summary Features V .( J 9H P 6 A BH>3 A53 C9693 1C9 > 4A9E5B 1>4 43 43 ,& ), R 1 , > =1G ,& P G3 5<<5>C 71C5 3 81A75 G R A 4D3 C ( & 9 Z I -( 6 9 P .5AH < F > A5B9BC1>3 5 R 9 Z P 3 81>>5< > A=1< <5E5< P E1<1>3 85 A1C54 ) P * D1<96954 13 3 A49>7 C 6 A C1A75C 1 <93 1C9 >B P )2 6A55 <1C9>7 + , 3 = <91>C P 1< 75> 6A55 13 3 A49>7 C Type ) )) Package E=%ID*.+%+ E=%ID**(%+ Marking (1(C(.C (1+C(.C Maximum ratings, 1C T S D><5BB C85AF9B5 B 53 96954 V Parameter Symbol Conditions Value Unit * I >C9>D DB 4A19> 3 DAA5>C T S -( 6 9 8 T S -( 8 + I T S *(( )D<B54 4A19> 3 DAA5>C 9 X Q 8 E1<1>3 85 5>5A7H B9>7<5 D<B5 E I R ,+ Y 6H 9 =H 1C5 B DA3 5 E <C175 V p*( J =H ) F5A 49BB9 1C9 > P T S /) K 8 ( 5A1C9>7 1>4 BC A175 C5= 5A1CDA5 T T S V S 3 <9=1C93 3 1C57 AH ) ,- 1>4 , * DAA5>C 9B <9=9C54 2 H 2 >4F9A5 F9C8 1> R % / C85 3 89 9B 12 <5 C 3 1AAH T 8 + ,55 697DA5 , * 5E93 5 > == G == G == 5 GH ) + F9C8 3 = >5 <1H5A V = C893 3 5A 1A51 6 A 4A19> 3 >>53 C9 > ) 9B E5AC93 1< 9> BC9<< 19A + 5E 175 IPB090N06N3 G IPP093N06N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics -85A=1< A5B9BC1>3 5 :D>3 C9 > 3 1B5 R % % )&. A K T 8 -85A=1< A5B9BC1>3 5 R =9>9=1< 6 C A9>C T 6 , :D>3 C9 > 1=2 95>C % % ,( 3 =U 3 <9>7 1A51 Electrical characteristics, 1C T S D><5BB C85AF9B5 B 53 96954 V Static characteristics V V . I = A19> B DA3 5 2 A51 4 F> E <C175 .( % % J7G 9HH =H 9 V V 4V I V 1C5 C8A5B8 <4 E <C175 * + , = T 9H =H 9 V . V . 9H =H 05A 71C5 E <C175 4A19> 3 DAA5>C I % (&) ) r6 9HH T S V V . V . 9H =H % )( )(( T S V I V . V . 1C5 B DA3 5 <51 175 3 DAA5>C % ) )(( Z6 =HH =H 9H R V . I A19> B DA3 5 > BC1C5 A5B9BC1>3 5 % 0&( 1&+ 9 Z =H 9 V . I =H 9 % /&/ 1HB9 1C5 A5B9BC1>3 5 R % (&/ % = fV f5*fI fR 9H 9 9 Z YMc g I MZ O ZP O MZOQ *0 -- % H R I 9 + 5E 175