IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 mW DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB100N04S4-H2 PG-TO263-3-2 4N04H2 IPI100N04S4-H2 PG-TO262-3-1 4N04H2 IPP100N04S4-H2 PG-TO220-3-1 4N04H2 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 100 A Continuous drain current D C GS 2) 100 T =100C, V =10V C GS 2) I T =25C 400 Pulsed drain current D,pulse C 2) E I =50A 280 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 100 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 115 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2012-07-02IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.3 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =70A 2.0 3.0 4.0 GS(th) DS GS D Zero gate voltage drain current I V =40V, V =0V - 0.03 1 A DSS DS GS V =18V, V =0V, DS GS - 1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =100A - 2.4 2.7 mW DS(on) GS D V =10V, I =100A, GS D - 2.1 2.4 SMD version Rev. 1.0 page 2 2012-07-02