IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G %& 3 Power-Transistor Product Summary Features V 0( J 9H Q 451< 6 B 8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 R 1&/ , > =1H ,& Q ( D9=9J54 D53 8> < 7I 6 B 3 >F5BD5BC I /( 6 9 Q H3 5<<5>D 71D5 3 81B75 H R B 4E3 D ( & 9 Z Q 3 81>>5< > B=1< <5F5< Q 1F1<1>3 85 D5CD54 Q )2 6B55 <1D9>7 + , 3 = <91>D ) Q * E1<96954 13 3 B49>7 D 6 B D1B75D 1 <93 1D9 >C Q 1< 75> 6B55 13 3 B49>7 D Type )) ) ) E=%ID**(%+ E=%ID*.*%+ E=%ID*.+%+ Package Marking )((C(0C )((C(0C (1/C(0C Maximum ratings, 1D T T E><5CC D85BG9C5 C 53 96954 V Parameter Symbol Conditions Value Unit * I >D9>E EC 4B19> 3 EBB5>D T T /( 6 9 8 T T -) 8 * I T T *0( )E<C54 4B19> 3 EBB5>D 9 aX Q 8 + E I R 1( Y F1<1>3 85 5>5B7I C9>7<5 E<C5 6H 9 =H V 1D5 C EB3 5 F <D175 q*( J =H P T T ) G5B 49CC9 1D9 > )(( K 8 T T ( 5B1D9>7 1>4 CD B175 D5= 5B1DEB5 T V S 3 <9=1D93 3 1D57 BI ) ,- 1>4 , * ,55 697EB5 6 B = B5 45D19<54 9>6 B=1D9 > + ,55 697EB5 6 B = B5 45D19<54 9>6 B=1D9 > + 5F 175 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics -85B=1< B5C9CD1>3 5 :E>3 D9 > 3 1C5 R % % )&- A K T 8 -85B=1< B5C9CD1>3 5 R =9>9=1< 6 D B9>D T 6 * , :E>3 D9 > 1=2 95>D % % ,( 3 = 3 <9>7 1B51 Electrical characteristics, 1D T T E><5CC D85BG9C5 C 53 96954 V Static characteristics V V . I = B19> C EB3 5 2 B51 4 G> F <D175 0( % % J7G 9HH =H 9 V V 4V I V 1D5 D8B5C8 <4 F <D175 * *&0 +&- = T 9H =H 9 V . V . 9H =H 05B 71D5 F <D175 4B19> 3 EBB5>D I % (&) ) r6 9HH T T V V . V . 9H =H % )( )(( T T V I V . V . 1D5 C EB3 5 <51 175 3 EBB5>D % ) )(( Z6 =HH =H 9H R V . I B19> C EB3 5 > CD1D5 B5C9CD1>3 5 % 0&, )( 9 Z =H 9 V . I % ))&( )0&* =H 9 V . I =H 9 R B19> C EB3 5 > CD1D5 B5C9CD1>3 5 % 0&) 1&/ 9 Z HB9 V . I =H 9 % )(&/ )/&1HB9 1D5 B5C9CD1>3 5 R % )&. % = gV g5*gI gR 9H 9 9 Z YMd g I MZ O ZPaO MZOQ +( -1 % H R I 9 , * 5F93 5 > == H == H == 5 HI ) + G9D8 3 = >5 <1I5B V = D893 3 5B 1B51 6 B 4B19> 3 >>53 D9 > ) 9C F5BD93 1< 9> CD9<< 19B + 5F 175