IPB107N20NA IPP110N20NA TM OptiMOS 3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 10.7 m W DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 88 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB107N20NA IPP110N20NA Package PG-TO263-3 PG-TO220-3 Marking 107N20NA 110N20NA Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 88 A D C T =100C 63 C 1) I T =25C 352 Pulsed drain current D,pulse C E I =80A, R =25W Avalanche energy, single pulse 560 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s V Gate source voltage 20 V GS P T =25C Power dissipation 300 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) See figure 3 Rev. 2.1 page 1 2011-05-11IPB107N20NA IPP110N20NA Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.5 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 2) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 200 - - V (BR)DSS GS D V V =V , I =270A Gate threshold voltage 2 3 4 GS(th) DS GS D V =160V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =160V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS V =10V, I =88A, GS D R Drain-source on-state resistance - 9.9 11 m W DS(on) (TO220) V =10V, I =88A, GS D - 9.6 10.7 (TO263) 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2011-05-11