IPP50R350CP TM CoolMOS Power Transistor Product Summary Features V T 550 V DS jmax Lowest figure-of-merit R x Q ON g R 0.350 W DS(on),max Ultra low gate charge Q 19 nC g,typ Extreme dv/dt rated High peak current capability Pb-free lead plating RoHS compliant Halogen free for mold compound 1) PG-TO220 Qualified for industrial grade applications according to JEDEC CoolMOS CP is designed for: Hard- & soft switching SMPS topologies CCM PFC for Lamp Ballast, LCD & PDP TV PWM for Lamp Ballast, LCD & PDP TV TTyyppee PPaacckkaaggee MMaarrkkiningg IPIPPP5500R3R35500CPCP PPGG--TTOO222200 55R3R35500PP Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C 10 Continuous drain current A D C T =100C 6 C 2) I T =25C 22 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.7A, V =50V 246 mJ AS D DD 2),3) E I =3.7A, V =50V 0.37 Avalanche energy, repetitive t AR D DD AR 2),3) I 3.7 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...400V 50 V/ns DS V Gate source voltage static 20 V GS 30 AC (f>1 Hz) Power dissipation P T =25C 89 W tot C Operating and storage temperature T , T -55 ... 150 C j stg Mounting torque M3 and M3.5 screws 60 Ncm ReRevv.. 22.1.1 ppaaggee 11 22001122--0055--0088IPP50R350CP Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 5.6 Continuous diode forward current A S T =25C C 2) I 22 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.4 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 500 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =0.37mA 2.5 3 3.5 GS(th) DS GS D V =500V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =500V, V =0V, DS GS - 10 - T =150C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS V =10V, I =5.6A, GS D R Drain-source on-state resistance - 0.32 0.35 W DS(on) T =25C j V =10V, I =5.6A, GS D - 0.80 - T =150C j Gate resistance R f =1MHz, open drain - 2.2 - W G ReRevv.. 22.1.1 ppaaggee 22 22001122--0055--0088