MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R500CE Data Sheet Rev. 2.1 Final Power Management & Multimarket500V CoolMOS CE Power Transistor IPP50R500CE TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a cost appealing alternative compared to standard MOSFETs in target applications. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Drain Pin 2 Very high commutation ruggedness Easy to use/drive Pb-free plating, Halogen free mold compound Gate Qualified for industrial grade applications according to JEDEC (J-STD20 Pin 1 and JESD22) Source Pin 3 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV and Lighting. Table 1 Key Performance Parameters Parameter Value Unit V T 550 V DS j,max R 0.5 DS(on),max Q 18.7 nC g.typ I 24 A D,pulse Eoss 400V 2.02 J Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPP50R500CE PG-TO 220 5R500CE see Appendix A Final Data Sheet 2 Rev. 2.1, 2014-06-06