IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code Marking IPB80N08S2-07 PG-TO263-3-2 SP0002-19048 2N0807 IPP80N08S2-07 PG-TO220-3-1 SP0002-19040 2N0807 IPI80N08S2-07 PG-TO262-3-1 SP0002-19043 2N0807 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25 C, V =10 V 80 A Continuous drain current D C GS T =100 C, C 80 2) V =10 V GS 2) I T =25 C 320 Pulsed drain current D,pulse C 2) E I =80A 810 mJ Avalanche energy, single pulse AS D 4) V 20 V Gate source voltage GS P T =25 C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 0.5 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 5) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 75 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 2.1 3.0 4.0 GS(th) DS GS D V =75 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =75 V, V =0 V, DS GS - 1 100 2) T =125 C j Gate-source leakage current I V =20 V, V =0 V - 1 100 nA GSS GS DS R Drain-source on-state resistance V =10 V, I =80 A, - 5.8 7.4 m DS(on) GS D V =10 V, I =80 A, GS D - 5.5 7.1 SMD version Rev. 1.0 page 2 2006-03-03