IPP80P03P4L04AKSA1 Infineon

IPP80P03P4L04AKSA1 electronic component of Infineon
IPP80P03P4L04AKSA1 Infineon
IPP80P03P4L04AKSA1 MOSFETs
IPP80P03P4L04AKSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPP80P03P4L04AKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP80P03P4L04AKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPP80P03P4L04AKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2
Datasheet: IPP80P03P4L04AKSA1 Datasheet (PDF)
Price (USD)
500: USD 1.683 ea
Line Total: USD 841.5 
Availability : 0
  
QtyUnit Price
500$ 1.683
1000$ 1.449
5000$ 1.4267

Availability 0
Ship by Fri. 05 Sep to Thu. 11 Sep
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.5721


Availability 0
Ship by Fri. 05 Sep to Thu. 11 Sep
MOQ : 500
Multiples : 1
QtyUnit Price
500$ 1.5721


Availability 0
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.683
1000$ 1.449
5000$ 1.4267


Availability 0
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.9215
3$ 3.528
7$ 2.5646
17$ 2.4289


Availability 0
Ship by Fri. 05 Sep to Thu. 11 Sep
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 2.4522
10$ 2.1741
100$ 2.1307


Availability 0
Ship by Fri. 05 Sep to Thu. 11 Sep
MOQ : 4
Multiples : 1
QtyUnit Price
4$ 2.3096
10$ 1.9523
100$ 1.8559
500$ 1.7878
1000$ 1.752

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPP80P03P4L04AKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP80P03P4L04AKSA1 and other electronic components in the MOSFETs category and beyond.

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IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Marking IPB80P03P4L-04 PG-TO263-3-2 4P03L04 IPI80P03P4L-04 PG-TO262-3-1 4P03L04 IPP80P03P4L-04 PG-TO220-3-1 4P03L04 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, C 1) I -80 A Continuous drain current D V =-10V GS T =100C, C -80 2) V =-10V GS 2) I T =25C -320 Pulsed drain current D,pulse C E I =-40A Avalanche energy, single pulse 410 mJ AS D I Avalanche current, single pulse - -80 A AS Gate source voltage V - +5/-16 V GS P T =25 C Power dissipation 137 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2008-07-29 IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.1 K/W thJC Thermal resistance, junction - R ---62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-253A -1.0 -1.5 -2.0 GS(th) DS GS D V =-24V, V =0V, DS GS I Zero gate voltage drain current - -0.05 -1 A DSS T =25C j V =-24V, V =0V, DS GS - -20 -200 2) T =125C j I V =-16V, V =0V Gate-source leakage current - - -100 nA GSS GS DS Drain-source on-state resistance R V =-4.5V, I =-80A - 5.0 7 m DS(on) GS D V =-4.5V, I =-80A, GS D - 4.7 6.7 SMD version V =-10V, I =-80A - 3.7 4.4 GS D V =-10V, I =-80A, GS D - 3.4 4.1 SMD version Rev. 1.0 page 2 2008-07-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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