IPP80R450P7XKSA1 Infineon

IPP80R450P7XKSA1 electronic component of Infineon
IPP80R450P7XKSA1 Infineon
IPP80R450P7XKSA1 MOSFETs
IPP80R450P7XKSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPP80R450P7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP80R450P7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPP80R450P7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET LOW POWER_NEW
Field-stop IGBT module with 450A/800V and fast recovery diode.
Datasheet: IPP80R450P7XKSA1 Datasheet (PDF)
Price (USD)
500: USD 1.2061 ea
Line Total: USD 603.05 
Availability : 4850
  
Ship by Tue. 14 Oct to Mon. 20 Oct
QtyUnit Price
500$ 1.2061
1000$ 1.1143
2000$ 1.0415
2500$ 1.031
5000$ 1.0207

Availability 4850
Ship by Tue. 14 Oct to Mon. 20 Oct
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.2061
1000$ 1.1143
2000$ 1.0415
2500$ 1.031
5000$ 1.0207


Availability 485
Ship by Fri. 10 Oct to Tue. 14 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.3875
10$ 2.6105
100$ 1.617
500$ 1.0252


Availability 29
Ship by Fri. 10 Oct to Tue. 14 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.178
3$ 2.856
9$ 2.198
25$ 2.072


Availability 1940
Ship by Tue. 14 Oct to Mon. 20 Oct
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.229
1000$ 1.1355
2000$ 1.0612
2500$ 1.0507
5000$ 1.0401


Availability 455
Ship by Tue. 14 Oct to Mon. 20 Oct
MOQ : 67
Multiples : 1
QtyUnit Price
67$ 3.926
77$ 3.419
119$ 2.197


Availability 4850
Ship by Tue. 14 Oct to Mon. 20 Oct
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.2061
1000$ 1.1143
2000$ 1.0415
2500$ 1.031
5000$ 1.0207

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPP80R450P7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP80R450P7XKSA1 and other electronic components in the MOSFETs category and beyond.

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The IPP80R450P7XKSA1 is an optiMOS™ Power MOSFET from Infineon. It is a N-channel device with a drain-source voltage (VDS) of 450V, rated current (ID) of 80A, and a maximum power dissipation (PD) of 300W. The device has a very low gate charge (Qg) of 10 nC with a drive voltage (VGS) of 10V. It has a high level of thermal and electrical stability, with a low on-state resistance (RDS(on)) of 0.066 Ohm, allowing efficient energy transfer. This makes it suitable for use in various power supply and motor control applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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