Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 mW DS(on),max Optimized technology for DC/DC converters I 50 A D 1) Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating RoHS compliant Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Package PG-TO252-3-11 PG-TO252-3-23 PG-TO251-3-11 PG-TO251-3-21 Marking 050N03L 050N03L 050N03L 050N03L Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 50 A D GS C V =10 V, T =100C 50 GS C V =4.5 V, T =25C 50 GS C V =4.5 V, GS 50 T =100C C 2) I T =25C 350 Pulsed drain current D,pulse C 3) I T =25C 50 Avalanche current, single pulse AS C E I =35A, R =25W Avalanche energy, single pulse 60 mJ AS D GS I =50A, V =24V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =175C j,max V Gate source voltage 20 V GS 1) J-STD20 and JESD22 Rev. 2.0 page 1 2013-10-28IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 68 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 2.2 K/W thJC SMD version, device on PCB R minimal footprint - - 75 thJA 4) - - 50 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 30 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1 - 2.2 GS(th) DS GS D V =30V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS 5) Drain-source on-state resistance R V =4.5V, I =30A - 5.8 7.3 mW DS(on) GS D V =10V, I =30A - 4.2 5 GS D Gate resistance R - 1.5 - W G V >2 I R , DS D DS(on)max Transconductance g 38 77 - S fs I =30A D 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 2.0 page 2 2013-10-28