MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOSCE
650VCoolMOSCEPowerTransistor
IPS65R1K5CE
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket650VCoolMOSCEPowerTransistor
IPS65R1K5CE
IPAKSL
1Description
tab
CoolMOSisarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSCEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
Veryhighcommutationruggedness
Drain
Easytouse/drive Pin 2, Tab
Pb-freeplating,Halogenfreemoldcompound
Qualifiedforconsumergradeapplications
Gate
Pin 1
Applications
Source
Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandLighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V @ T 700 V
DS j,max
R 1500 m
DS(on),max
Q 10.5 nC
g.typ
ID,pulse 8.3 A
E @400V 1.15 J
oss
Body diode di/dt 500 A/s
Type/OrderingCode Package Marking RelatedLinks
IPS65R1K5CE PG-TO 251 65CE1K5 see Appendix A
Final Data Sheet 2 Rev.2.0,2014-09-25