IPS80R600P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineons over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E reduced Q , C , and C DS(on) oss g iss oss Best-in-class DPAK R DS(on) Best-in-class V(GS)th of 3V and smallest V (GS)th variation of 0.5V Integrated Zener Diode ESD protection Fully qualified acc. JEDEC for Industrial Applications Fully optimized portfolio Drain Pin 2, Tab Benefits Gate Best-in-class performance Pin 1 Enabling higher power density designs, BOM savings and lower assembly costs Source Pin 3 Easy to drive and to parallel Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential applications Recommended for hard and soft switching flyback topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power. Also suitable for PFC stage in Consumer applications and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj=25C 800 V R 0.60 DS(on),max Q 20 nC g,typ I 8 A D E 500V 2.0 J oss VGS(th),typ 3 V ESD class (HBM) 2 - Type / Ordering Code Package Marking Related Links IPS80R600P7 PG-TO 251-3 80R600P7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2018-02-07800V CoolMOS P7 Power Transistor IPS80R600P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.1, 2018-02-07