IPT007N06N Infineon

IPT007N06N MOSFET TM HSOF OptiMOS Power-Transistor, 60 V Features Tab 100% avalanche tested Superior thermal resistance N-channel 1) 1 Qualified according to JEDEC for target applications 2 3 4 5 Pb-free lead plating RoHS compliant 6 7 8 Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Drain Tab Table 1 Key Performance Parameters Parameter Value Unit Gate Pin 1 V 60 V DS Source Pin 2-8 RDS(on),max 0.75 m I 486 A D Q 227 nC oss Q (0V..10V) 216 nC G Type / Ordering Code Package Marking Related Links IPT007N06N PG-HSOF-8 007N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.3, 2019-07-22TM OptiMOS Power-Transistor , 60 V IPT007N06N Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.3, 2019-07-22