IPT015N10N5 Infineon

IPT015N10N5 MOSFET TM HSOF OptiMOS 5 Power-Transistor , 100 V Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x RDS(on) product (FOM) Very low on-resistance R DS(on) 1 N-channel, normal level 2 3 4 5 100% avalanche tested 6 7 8 Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Tab Parameter Value Unit V 100 V DS Gate Pin 1 RDS(on),max 1.5 m Source Pin 2-8 I 300 A D Q 213 nC oss Q (0V..10V) 169 nC G Type / Ordering Code Package Marking Related Links IPT015N10N5 PG-HSOF-8 015N10N5 - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.2, 2016-10-13TM OptiMOS 5 Power-Transistor , 100 V IPT015N10N5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.2, 2016-10-13