MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R2K0C6 Data Sheet Rev. 2.2 Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPU60R2K0C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. 1 2 3 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Drain Easy to use/drive Pin 2 Pb-free plating, Halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 Gate and JESD22) Pin 1 Source Pin 3 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom, UPS. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j max RDS(on),max 2 Qg,typ 6.7 nC ID,pulse 6 A Eoss 400V 0.76 J Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPU60R2K0C6 PG-TO 251 6R2K0C6 see Appendix A Final Data Sheet 2 Rev. 2.2, 2015-10-09