IPU80R1K0CE Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket800V CoolMOS CE Power Transistor IPA80R1K0CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power density designs. Features High voltage technology Extreme dv/dt rated High peak current capability Low gate charge Low effective capacitances Drain Pb-free plating, RoHS Compliant, Halogen free mold compound Pin 2, Tab Qualified for consumer grade applications Gate Pin 1 Applications LED Lighting for retrofit applications in QR Flyback topology Source Pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 800 V DS j=25C R 950 m DS(on),max Q 31 nC g.typ I 18 A D,pulse Eoss 400V 2.4 J Body diode di/dt 400 A/s Type / Ordering Code Package Marking Related Links IPA80R1K0CE PG-TO 220 FullPAK 8R1K0CE see Appendix A Final Data Sheet 2 Rev. 2.1, 2015-06-23