The IPW60R099CPAFKSA1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Infineon Technologies. It is designed to to provide high current and low on-resistance (rD) in SMD (surface mount device) packages. This part has a maximum drain-source voltage of 59 V, a current rating of 99 A, and a low gate charge (Qg) of 7.3 nC. It features an efficient design with an integrated thermal foldback function, which helps achieve low RDS(on), reduced source-drain inductance and enhanced power density. This MOSFET is ideal for use in portfolio of consumer, industrial, automotive, and other applications.