IPW90R800C3 CoolMOS Power Transistor Product Summary Features V T =25C 900 V DS J Lowest figure-of-merit R x Q ON g R T = 25C 0.8 DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant PG-TO247 Ultra low gate charge CoolMOS 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type Package Marking IPW90R800C3 PG-TO247 9R800C Maximum ratings, at T =25 C, unless otherwise specified J Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 6.9 A D C T =100 C 4.4 C 2) I T =25 C 15 Pulsed drain current D,pulse C E I =1.4 A, V =50 V Avalanche energy, single pulse 157 mJ AS D DD 2),3) E I =1.4 A, V =50 V 0.46 Avalanche energy, repetitive t AR D DD AR 2),3) I Avalanche current, repetitive t 1.4 A AR AR V =0...400 V 50 MOSFET dv /dt ruggedness dv /dt V/ns DS Gate source voltage V static 20 V GS 30 AC (f>1 Hz) Power dissipation P T =25 C 104 W tot C T , T -55 ... 150 Operating and storage temperature C J stg Mounting torque M3 and M3.5 screws 60 Ncm Rev. 1.0 page 1 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-AIPW90R800C3 Maximum ratings, at T =25 C, unless otherwise specified J Parameter Symbol Conditions Value Unit I 4.1 Continuous diode forward current A S T =25 C C 2) I 15 Diode pulse current S,pulse 4) dv /dt 4 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.2 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified J Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 900 - - V (BR)DSS GS D V V =V , I =0.46 mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =900 V, V =0 V, DS GS Zero gate voltage drain current I -- 1A DSS T =25 C j V =900 V, V =0 V, DS GS -10- =150 C T j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =4.1 A, GS D R Drain-source on-state resistance - 0.62 0.8 DS(on) T =25 C j V =10 V, I =4.1 A, GS D - 1.7 - T =150 C j Gate resistance R f =1 MHz, open drain - 1.3 - G Rev. 1.0 page 2 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A