IPZ40N04S5-3R1 OptiMOS -5 Power-Transistor Product Summary V 40 V DS R 3.1 mW DS(on),max I 40 A D Features PG-TSDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260C peak reflow 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPZ40N04S5-3R1 PG-TSDSON-8-33 5N0431 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 40 A Continuous drain current D C GS 2) 40 T =100C, V =10V C GS 2) I T =25C 160 Pulsed drain current D,pulse C 2) E I =20A 140 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 40 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 71 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.1 page 1 2015-07-27IPZ40N04S5-3R1 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 2.1 K/W thJC Thermal resistance, junction - 2 3) R - - 60 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =30A 2.2 2.8 3.4 GS(th) DS GS D V =40V, V =0V, DS GS Zero gate voltage drain current I - - 1 A DSS T =25C j V =40V, V =0V, DS GS - - 100 2) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =7V, I =20A Drain-source on-state resistance - 3.0 3.6 mW DS(on) GS D V =10V, I =20A - 2.5 3.1 GS D Rev. 1.1 page 2 2015-07-27