IRF100P219XKMA1 Infineon

IRF100P219 MOSFET PG-TO 247-3 StrongIRFET Features Very low R DS(on) Excellent gate charge x R DS(on) (FOM) Optimized Q rr 175C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 1 2 3 Benefits Reduced conduction losses Ideal for high switching frequency Drain Lower overshoot voltage Pin 2 Increased reliability versus 150C rated parts Halogen-free according to IEC61249-2-21 Gate Pin 1 Source Table 1 Key Performance Parameters Pin 3 Parameter Value Unit V DS 100 V R 1.4 m DS(on),typ R 1.7 m DS(on),max I 316 A D(Silicon Limited) I 203 A D(Package Limited) Q G(0V..10V) 168 nC Type / Ordering Code Package Marking Related Links IRF100P219 PG-TO 247-3 IRF100P219 - Final Data Sheet 1 Rev. 2.1, 2020-01-20StrongIRFET IRF100P219 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.1, 2020-01-20