PD - 91278 IRF1010N HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V = 55V DSS l Dynamic dv/dt Rating l 175C Operating Temperature R = 11m DS(on) G l Fast Switching l Fully Avalanche Rated I = 85A D S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 85 D C GS I T = 100C Continuous Drain Current, V 10V 60 A D C GS I Pulsed Drain Current 290 DM P T = 25C Power Dissipation 180 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 43 A AR E Repetitive Avalanche Energy 18 mJ AR dv/dt Peak Diode Recovery dv/dt 3.6 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.85 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 3/16/01IRF1010N Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 11 m V = 10V, I = 43A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 32 S V = 25V, I = 43A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 120 I = 43A g D Q Gate-to-Source Charge 19 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 41 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 13 V = 28V d(on) DD t Rise Time 76 I = 43A r D ns t Turn-Off Delay Time 39 R = 3.6 d(off) G t Fall Time 48 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 3210 V = 0V iss GS C Output Capacitance 690 V = 25V oss DS C Reverse Transfer Capacitance 140 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 1030250 mJ I = 4.3A, L = 270H AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 85 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 290 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 43A, V = 0V SD J S GS t Reverse Recovery Time 69 100 ns T = 25C, I = 43A rr J F Q Reverse Recovery Charge 220 230 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by I 43A, di/dt 210A/s, V V , SD DD (BR)DSS T 175C max. junction temperature. ( See fig. 11 ) J Pulse width 400s duty cycle 2%. Starting T = 25C, L = 270H J This is a typical value at device destruction and represents R = 25, I = 43A, V =10V (See Figure 12) G AS GS operation outside rated limits. This is a calculated value limited to T = 175C . J Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 www.irf.com