Advanced Process Technology D Ultra Low On-Resistance V = 40V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 0.009 DS(on) Fast Switching G Fully Avalanche Rated I = 100A D Lead-Free S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low TO-220AB thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 100 D C GS I T = 100C Continuous Drain Current, V 10V 71 A D C GS I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 170 W D C Linear Derating Factor 1.11 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 350 mJ AS I Avalanche Current 60 A AR E Repetitive Avalanche Energy 17 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.90 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 02/02/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.038 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.009 V = 10V, I = 60A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 37 S V = 25V, I = 60A fs DS D 25 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 32V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 93 I = 60A g D Q Gate-to-Source Charge 29 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 30 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 15 V = 20V d(on) DD t Rise Time 114 I = 60A r D t Turn-Off Delay Time 28 R = 3.6 d(off) G t Fall Time 19 R = 0.33, See Fig. 10 f D D Between lead, 6mm (0.25in.) G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 2900 V = 0V iss GS C Output Capacitance 1100 pF V = 25V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 400 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 60A, V = 0V SD J S GS t Reverse Recovery Time 74 110 ns T = 25C, I = 60A rr J F Q Reverse RecoveryCharge 188 280 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Starting T = 25C, L = 194H Caculated continuous current based on maximum allowable J R = 25, I = 60A. (See Figure 12) junction temperature for recommended current-handling of the G AS package refer to Design Tip 93-4 I 60A, di/dt 304A/s, V V , SD DD (BR)DSS T 175C J 2 www.irf.com