PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 80V 10m 95A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS 2 TO-220AB D Pak TO-262 App. Note AN1001) IRF1312 IRF1312S IRF1312L Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 95 D C GS I T = 100C Continuous Drain Current, V 10V 67 A D C GS I Pulsed Drain Current 380 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 210 D C Linear Derating Factor 1.4 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 5.1 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.73 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB mount) 40 JA Notes through are on page 11 www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 80 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.078 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 6.6 10 m V = 10V, I = 57A DS(on) GS D V Gate Threshold Voltage 3.5 5.5 V V = V , I = 250A GS(th) DS GS D 1.0 V = 76V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 64V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 92 S V = 25V, I = 57A fs DS D Q Total Gate Charge 93 140 I = 57A g D Q Gate-to-Source Charge 36 nC V = 40V gs DS Q Gate-to-Drain Mille) Charge 34 V = 10V, gd GS t Turn-On Delay Time 25 V = 40V d(on) DD t Rise Time 130 I = 57A r D ns t Turn-Off Delay Time 47 R = 4.5 d(off) G t Fall Time 51 V = 10V f GS C Input Capacitance 5450 V = 0V iss GS C Output Capacitance 550 V = 25V oss DS C Reverse Transfer Capacitance 340 pF = 1.0MHz rss C Output Capacitance 1910 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 380 V = 0V, V = 64V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 620 V = 0V, V = 0V to 64V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 250 mJ AS I Avalanche Current 57 A AR E Repetitive Avalanche Energy 21 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 95 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 380 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 57A, V = 0V SD J S GS t Reverse Recovery Time 64 96 ns T = 25C, I = 57A rr J F Q Reverse RecoveryCharge 150 230 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com