IRF1324S-7PPbF HEXFET Power MOSFET V 24V DSS Applications R typ. 0.8m DS(on) High Efficiency Synchronous Rectification in SMPS max. 1.0m Uninterruptible Power Supply High Speed Power Switching I 429A D (Silicon Limited) Hard Switched and High Frequency Circuits I 240A D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA 2 Enhanced body diode dV/dt and dI/dt Capability D Pak 7 Pin Lead-Free G D S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRF1324S-7PPbF Tube 50 2 IRF1324S-7PPbF D Pak 7 Pin IRF1324STRL-7PP Tape and Reel Left 800 Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 429 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 303 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I Pulsed Drain Current 1640 DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery 1.6 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy (Thermally Limited) 230 AS mJ I Avalanche Current See Fig.14,15, 18a, 18b A AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.50 R JC C/W Junction-to-Ambient 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-15 IRF1324S-7PPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 24 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.80 1.0 m V = 10V, I = 160A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V =24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =19V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS R Gate Resistance 3.0 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J gfs Forward Trans conductance 190 S V = 15V, I = 160A DS D Q Total Gate Charge 180 252 I = 75A g D Q Gate-to-Source Charge 47 V = 12V gs DS Q Gate-to-Drain Charge 58 nC V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 122 sync g gd t Turn-On Delay Time 19 V = 16V d(on) DD t Rise Time 240 I = 160A r D ns t Turn-Off Delay Time 86 R = 2.7 d(off) G t Fall Time 93 V = 10V f GS C Input Capacitance 7700 V = 0V iss GS C Output Capacitance 3380 V = 19V oss DS C Reverse Transfer Capacitance 1930 = 1.0MHz, See Fig. 5 rss pF C Effective Output Capacitance (Energy Related) 4780 V = 0V, V = 0V to 19V oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 4970 V = 0V, V = 0V to 19V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 429 S (Body Diode) showing the A Pulsed Source Current integral reverse I 1640 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 160A,V = 0V SD J S GS 71 107 T = 25C V = 20V J DD t Reverse Recovery Time ns rr 74 110 T = 125C I = 160A, J F 83 120 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 92 140 T = 125C J I Reverse Recovery Current 2.0 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.018mH, R = 25 , I = 160A, V =10V. Part not recommended for use above Jmax, J G AS GS this value. I 160A, di/dt 600A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-10-15