StrongIRFET IRF135SA204 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D V 135V DSS Battery powered circuits Half-bridge and full-bridge topologies R typ. 4.7m DS(on) Synchronous rectifier applications G max 5.9m Resonant mode power supplies S OR-ing and redundant power switches I 160A D (Silicon Limited) DC/DC and AC/DC converters DC/AC Inverters D S Benefits S S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness S S S G Fully Characterized Capacitance and Avalanche SOA 2 Enhanced body diode dV/dt and dI/dt Capability D PAK-7Pin Lead-Free, RoHS Compliant, Halogen-Free IRF135SA204 G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity 2 IRF135SA204 D PAK-7Pin Tape and Reel 800 IRF135SA204 200 30 I = 96A D 25 150 20 15 100 T = 125C J 10 50 5 T = 25C J 0 0 4 8 12 16 20 25 50 75 100 125 150 175 V , Gate-to-Source Voltage (V) GS T , CaseTemperature (C) C Fig 1. Typical On Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 2017-05-12 R (on), Drain-to -Source On Resistance ( m) DS I , Drain Current (A) D IRG5K50P5K50PM06E IRF135SA204 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 160 D C GS I T = 100C Continuous Drain Current, V 10V 113 A D C GS I Pulsed Drain Current 608 DM P T = 25C Maximum Power Dissipation 500 W D C Linear Derating Factor 3.3 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E AS (Thermally limited) 670 Single Pulse Avalanche Energy mJ E AS (Thermally limited) 1280 Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.3 JC C/W Junction-to-Ambient (PCB Mount) R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 135 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.14 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 4.7 5.9 V = 10V, I = 96A m DS(on) GS D V Gate Threshold Voltage 2.0 3.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V =135 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 135V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.2 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 146H, R = 50 , I = 96A, V =10V. Jmax J G AS GS I 96A, di/dt 2200A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: