PD-90369A
REPETITIVE AVALANCHE AND dv/dt RATED
IRF140
HEXFET TRANSISTORS
100V, N-CHANNEL
THRU-HOLE - TO-3 (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF140 100V 0.077 28A
TO-3
The HEXFET technology is the key to International
Features:
Rectifiers advanced line of power MOSFET transistors.
Repetitive Avalanche Ratings
The efficient geometry and unique processing of this latest
Dynamic dv/dt Rating
State of the Art design achieves: very low on-state
Hermetically Sealed
resistance combined with high transconductance; superior
Simple Drive Requirements
reverse energy and diode recovery dv/dt capability.
Ease of Paralleling
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
I @ V = 0V, T = 25C Continuous Drain Current 28
D GS C
A
I @ V = 0V, T = 100C Continuous Drain Current 20
D GS C
I Pulsed Drain Current 112
DM
P @ T = 25C Max. Power Dissipation 125 W
D C
Linear Derating Factor 1.0 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 250 mJ
AS
I Avalanche Current 28 A
AR
E Repetitive Avalanche Energy 12.5 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T Operating Junction -55 to 150
J
C
T Storage Temperature Range
STG
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
www.irf.com 1
IRF140
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA
DSS GS D
BV / T Temperature Coefficient of Breakdown 0.13 V/C Reference to 25C, I = 1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 0.077 V =10V, I = 20A
DS(on) GS D
Resistance 0.089 V =10V, I = 28A
GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 9.1 S V = 15V, I = 20A
fs DS DS
I Zero Gate Voltage Drain Current 25 V = 80V, V =0V
DSS DS GS
A
250 V = 80V
DS
V = 0V, T = 125C
GS J
I Gate-to-Source Leakage Forward 100 V = 20V
GSS GS
nA
I Gate-to-Source Leakage Reverse -100 V = -20V
GSS GS
Q Total Gate Charge 30 59 V =10V, ID = 28A
g GS
Q Gate-to-Source Charge 2.4 12 nC V = 50V
gs DS
Q Gate-to-Drain (Miller) Charge 12 30.7
gd
t Turn-On Delay Time 21 V = 50V, I = 28A,
d(on) DD D
t Rise Time 145 V =10V, R = 9.1
r GS G
ns
t Turn-Off Delay Time 55
d(off)
t Fall Time 105
f
L L Total Inductance 6.1
nH
S + D Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
C Input Capacitance 1660 V = 0V, V = 25V
iss GS DS
C Output Capacitance 550 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 120
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) 28
S
A
I Pulse Source Current (Body Diode) 112
SM
V Diode Forward Voltage 1.5 V T = 25C, I = 28A, V = 0V
j
SD S GS
t Reverse Recovery Time 400 ns Tj = 25C, I = 28A, di/dt 100A/s
rr F
Q Reverse Recovery Charge 2.9 C V 50V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction to Case 1.0
thJC
C/W
R Junction to Ambient 30Typical socket mount
thJA
2 www.irf.com