IRF1407SPbF IRF1407LPbF Benefits HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance V 75V DSS Dynamic dv/dt Rating 175C Operating Temperature R 0.0078 DS(on) Fast Switching I 100A D Repetitive Avalanche Allowed up to Tjmax Lead-Free D Description D Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve S S extremely low on-resistance per silicon area. This benefit, D G G combined with the fast switching speed and ruggedized device TO-262 Pak D2 Pak design that HEXFET power MOSFETs are well known for, IRF1407LPbF IRF1407SPbF provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of G D S accommodating die sizes up to HEX-4. It provides the highest Gate Drain Source power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for low-profile applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF1407LPbF TO-262 Tube 50 IRF1407LPbF (Obsolete) IRF1407SPbF D2-Pak Tape and Reel Left 800 IRF1407STRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 100 D C GS I T = 100C Continuous Drain Current, V 10V 70 A D C GS I Pulsed Drain Current 520 DM P T = 25C Maximum Power Dissipation 3.8 W D A P T = 25C Maximum Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 390 AS mJ I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 4.6 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.75 R JC C/W Junction-to-Ambient ( PCB Mount, steady state) 40 R JA 1 2016-5-26 IRF1407S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.0078 V = 10V, I = 78A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 74 S V = 25V, I = 78A DS D 20 V =75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 160 250 I = 78A g D Q Gate-to-Source Charge 35 52 nC V = 60V gs DS Q Gate-to-Drain Charge 54 81 V = 10V gd GS t Turn-On Delay Time 11 V = 38V d(on) DD t Rise Time 150 I =78A r D ns t Turn-Off Delay Time 150 R = 2.5 d(off) G t Fall Time 140 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 5600 V = 0V iss GS C Output Capacitance 890 V = 25V oss DS C Reverse Transfer Capacitance 190 = 1.0kHz, See Fig. 5 rss pF C Output Capacitance 5800 V = 0V, V = 1.0V = 1.0kHz oss GS DS C Output Capacitance 560 V = 0V, V = 60V = 1.0kHz oss GS DS C Effective Output Capacitance 1100 V = 0V, V = 0V to 60V oss eff. GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 100 S (Body Diode) showing the A Pulsed Source Current integral reverse I 520 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 78A,V = 0V SD J S GS t Reverse Recovery Time 110 170 ns T = 25C ,I = 78A rr J F Q Reverse Recovery Charge 390 590 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) starting T = 25C, L = 0.13mH, R = 25 , I = 78A, V =10V. (See fig. 12) J G AS GS I 78A, di/dt 320A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax Uses IRF1407 data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2016-5-26