PD - 97057A IRF2804S-7PPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175C Operating Temperature Fast Switching V = 40V DSS Repetitive Avalanche Allowed up to Tjmax Lead-Free G R = 1.6m DS(on) Description S This HEXFET Power MOSFET utilizes the latest I = 160A D processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 320 A D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 230 C GS D I T = 25C Continuous Drain Current, V 10V (Package Limited) 160 D C GS I Pulsed Drain Current 1360 DM P T = 25C Maximum Power Dissipation 330 W D C Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy (Thermally Limited) E 630 mJ AS Single Pulse Avalanche Energy Tested Value E (tested) 1050 AS Avalanche Current I See Fig.12a,12b,15,16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.50 C/W JC Case-to-Sink, Flat, Greased Surface R 0.50 CS Junction-to-Ambient R 62 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.028 V/C Reference to 25C, I = 1mA DSS J D m R SMD Static Drain-to-Source On-Resistance 1.2 1.6 V = 10V, I = 160A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 220 S V = 10V, I = 160A DS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 170 260 nC I = 160A g D Q Gate-to-Source Charge 63 V = 32V gs DS Q Gate-to-Drain Mille) Charge 71 V = 10V gd GS t Turn-On Delay Time 17 ns V = 20V d(on) DD Rise Time 150 = 160A t I r D t Turn-Off Delay Time 110 R = 2.6 d(off) G t Fall Time 105 V = 10V f GS L Internal Drain Inductance 4.5 nH Between lead, D D 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 6930 pF V = 0V iss GS C Output Capacitance 1750 V = 25V oss DS C Reverse Transfer Capacitance 970 = 1.0MHz, See Fig. 5 rss C Output Capacitance 5740 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1570 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 2340 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 320 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 1360 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 160A, V = 0V SD 1.3 V J S GS t Reverse Recovery Time T = 25C, I = 160A, V = 20V rr 4365ns DD J F Q Reverse Recovery Charge 48 72 nC di/dt = 100A/s rr Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax max. junction temperature. (See fig. 11). repetitive avalanche performance. Limited by T , starting T = 25C, Jmax J This value determined from sample failure population. L=0.049mH, R = 25 , I = 160A, V =10V. G AS GS 100% tested to this value in production. 2 Part not recommended for use above this value. This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and C eff. is a fixed capacitance that gives the same soldering techniques refer to application note AN-994. oss charging time as C while V is rising from 0 to R is measured at T of approximately 90C. oss DS J 80% V . DSS 2 www.irf.com