PD - 96098A IRF2903ZSPbF IRF2903ZLPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 30V DSS 175C Operating Temperature Fast Switching R = 2.4m DS(on) Repetitive Avalanche Allowed up to Tjmax G Lead-Free I = 75A D S Description This HEXFET Power MOSFET utilizes the latest D D processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating S S temperature, fast switching speed and improved D D G repetitive avalanche rating. These features combine G 2 to make this design an extremely efficient and D Pak TO-262 reliable device for use in a wide variety of applications. GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 235 GS D C 10V (Silicon Limited) I T = 100C Continuous Drain Current, V 166 GS A D C Continuous Drain Current, V 10V (Package Limited) 75 I T = 25C GS D C I Pulsed Drain Current 1020 DM P T = 25C Power Dissipation 231 W D C 1.54 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS E 231 Single Pulse Avalanche Energy AS (Thermally limited) mJ E (Tested ) 820 AS Single Pulse Avalanche Energy Tested Value I Avalanche Current See Fig.12a, 12b, 15, 16 AR A E Repetitive Avalanche Energy AR mJ Operating Junction and -55 to + 175 T J T Storage Temperature Range C STG 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A V Drain-to-Source Breakdown Voltage 30 V GS D (BR)DSS V / T Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA (BR)DSS J D V = 10V, I = 75A R Static Drain-to-Source On-Resistance 1.9 2.4 m GS D DS(on) V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D V = 10V, I = 75A gfs Forward Transconductance 120 S DS D I Drain-to-Source Leakage Current 20 A V = 30V, V = 0V DSS DS GS V = 30V, V = 0V, T = 125C 250 DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS V = -20V Gate-to-Source Reverse Leakage -200 GS Q Total Gate Charge 160 240 I = 75A g D V = 24V Q Gate-to-Source Charge 51 nC DS gs Q Gate-to-Drain Mille) Charge 58 V = 10V gd GS V = 15V t Turn-On Delay Time 24 DD d(on) t I = 75A r Rise Time 100 D R = 3.2 t Turn-Off Delay Time 48 ns d(off) G t V = 10V Fall Time 37 GS f L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact V = 0V C Input Capacitance 6320 iss GS C V = 25V Output Capacitance 1980 DS oss C Reverse Transfer Capacitance 1100 pF = 1.0MHz rss V = 0V, V = 1.0V, = 1.0MHz C Output Capacitance 5930 GS DS oss C Output Capacitance 2010 V = 0V, V = 24V, = 1.0MHz oss GS DS V = 0V, V = 0V to 24V C eff. Effective Output Capacitance 3050 GS DS oss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol I Continuous Source Current 75 S (Body Diode) A showing the integral reverse I Pulsed Source Current 1020 SM (Body Diode) p-n junction diode. T = 25C, I = 75A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t Reverse Recovery Time 34 51 ns T = 25C, I = 75A, V = 15V DD rr J F di/dt = 100A/s Q Reverse Recovery Charge 29 44 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com