PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating V = 55V DSS 175C Operating Temperature Fast Switching R = 8.0m DS(on) G Fully Avalanche Rated Lead-Free I = 110A D S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power 2 D Pak TO-262 capability and the lowest possible on-resistance in any existing surface IRF3205SPbF IRF3205LPbF 2 mount package. The D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 110 D C GS I T = 100C Continuous Drain Current, V 10V 80 A D C GS I Pulsed Drain Current 390 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 62 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 C/W JC R Junction-to-Ambient (PCB mounted, steady-state)* 40 JA www.irf.com 1 03/11/04IRF3205S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 8.0 m V = 10V, I = 62A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 44 S V = 25V, I = 62A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 146 I = 62A g D Q Gate-to-Source Charge 35 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 54 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 14 V = 28V d(on) DD t Rise Time 101 I = 62A r D ns t Turn-Off Delay Time 50 R = 4.5 d(off) G t Fall Time 65 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 3247 V = 0V iss GS C Output Capacitance 781 V = 25V oss DS C Reverse Transfer Capacitance 211 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 1050 264 mJ I = 62A, L = 138H AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 110 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 390 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 62A, V = 0V SD J S GS t Reverse Recovery Time 69 104 ns T = 25C, I = 62A rr J F Q Reverse Recovery Charge 143 215 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Calculated continuous current based on maximum allowable Starting T = 25C, L = 138H J junction temperature. Package limitation current is 75A. R = 25, I = 62A. (See Figure 12) G AS This is a typical value at device destruction and represents I 62A di/d 207A/s, V V , SD DD (BR)DSS operation outside rated limits. T 175C J This is a calculated value limited to T = 175C. J * When mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com