IRF3704ZPbF IRF3704ZSPbF IRF3704ZLPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck V R max Converters for Computer Processor Power Qg DSS DS(on) Lead-Free 20V 7.9m 8.7nC Benefits Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 2 TO-220AB D Pak TO-262 IRF3704Z IRF3704ZS IRF3704ZL Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 67 GS A D C Continuous Drain Current, V 10V 47 I T = 100C C GS D Pulsed Drain Current I 260 DM P T = 25C Maximum Power Dissipation 57 W D C P T = 100C Maximum Power Dissipation 28 C D Linear Derating Factor 0.38 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R 2.65 C/W JC Junction-to-Case R 0.50 CS Case-to-Sink, Flat Greased Surface R JA 62 Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount) Notes through are on page 12 www.irf.com 1 6/29/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 6.5 7.9 V = 10V, I = 21A GS D 9.1 11.1 V = 4.5V, I = 17A GS D V GS(th) Gate Threshold Voltage 1.65 2.1 2.55 V V = V , I = 250A DS GS D V /T Gate Threshold Voltage Coefficient -5.6 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS = -20V Gate-to-Source Reverse Leakage -100 V GS gfs Forward Transconductance 48 S V = 10V, I = 17A DS D Q g Total Gate Charge 8.7 13 Q gs1 Pre-Vth Gate-to-Source Charge 2.9 V = 10V DS Q Post-Vth Gate-to-Source Charge 1.1 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 2.3 I = 17A gd D Q Gate Charge Overdrive 2.4 See Fig. 16 godr Q Switch Charge (Q + Q ) 3.4 sw gs2 gd Q Output Charge 5.6 nC V = 10V, V = 0V oss DS GS t d(on) Turn-On Delay Time 8.9 V = 10V, V = 4.5V DD GS t r Rise Time 38 I = 17A D t d(off) Turn-Off Delay Time 11 ns Clamped Inductive Load t Fall Time 4.2 f C Input Capacitance 1220 V = 0V iss GS C Output Capacitance 390 pF V = 10V oss DS C Reverse Transfer Capacitance 190 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E mJ AS 36 Avalanche Current I AR 17 A Repetitive Avalanche Energy E AR 5.7 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions D 67 I Continuous Source Current MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 260 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V SD J S GS t rr Reverse Recovery Time 11 17 ns T = 25C, I = 17A, V = 10V J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 2.3 3.5 nC 2 www.irf.com