IRF3706 IRF3706S SMPS MOSFET IRF3706L Applications HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification V R max I DSS DS(on) D for Telecom and Industrial Use 20V 8.5m 77A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low R at 4.5V V DS(on) GS Fully Characterized Avalanche Voltage 2 and Current TO-220AB D Pak TO-262 IRF3706 IRF3706S IRF3706L Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage 20 V DS V Gate-to-Source Voltage 12 V GS Continuous Drain Current, V 10V 77 I T = 25C GS D C Continuous Drain Current, V 10V I T = 100C GS 54 A D C Pulsed Drain Current I 280 DM Maximum Power Dissipation P T = 25C 88 W D C Maximum Power Dissipation P T = 100C 44 W D C Linear Derating Factor 0.59 W/C T ,T Junction and Storage Temperature Range C J -55 to + 175 STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.7 JC Case-to-Sink, Flat, Greased Surface R 0.50 C/W cs Junction-to-Ambient R 62 JA Junction-to-Ambient( PCB mount) R 40 JA Notes through are on page 11 www.irf.com 1 IRF3706/S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V V = 0V, I = 250A Drain-to-Source Breakdown Voltage 20 V (BR)DSS GS D V /T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficie 0.021 V/C (BR)DSS J D V = 10V, I = 15A 6.0 8.5 GS D R m V = 4.5V, I = 12A DS(on) Static Drain-to-Source On-Resistan 7.3 10.5 GS D V = 2.8V, I = 7.5A 11 22 GS D V V = V , I = 250A Gate Threshold Voltage 0.6 2 V GS(th) DS GS D I V = 16V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 16V, V = 0V, T = 125C 100 DS GS J I V = 12V GSS Gate-to-Source Forward Leakage 200 nA GS V = -12V Gate-to-Source Reverse Leakage -200 GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 16V, I = 57A gfs Forward Transconductance 53 S DS D Rg Gate Resistance 1.8 Q I = 28A g Total Gate Charge 23 35 D Q V = 10V gs Gate-to-Source Charge 8.0 12 nC DS Q Gate-to-Drain Mille) Charge 5.5 8.3 V = 4.5V gd GS Q V = 0V, V =10V Output Gate Charge 16 24 oss GS DS t V = 10V Turn-On Delay Time 6.8 d(on) DD t I = 28A r Rise Time 87 D t R = 1.8 d(off) Turn-Off Delay Time 17 ns G t V = 4.5V f Fall Time 4.8 GS C V = 0V iss Input Capacitance 2410 GS C Output Capacitance 1070 pF V = 10V oss DS C Reverse Transfer Capacitance 140 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 220 mJ Avalanche Current I AR 28 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions 77 I Continuous Source Current MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 280 integral reverse SM (Body Diode) p-n junction diode. V T = 25C, I = 36A, V = 0V Diode Forward Voltage 0.88 1.3 V SD J S GS 0.82 T = 125C, I = 36A, V = 0V J S GS t Reverse Recovery Time 45 68 ns T = 25C, I = 36A, V =20V R rr J F di/dt = 100A/s Q Reverse Recovery Charge 65 98 nC rr t T = 125C, I = 36A, V =20V Reverse Recovery Time 49 74 ns rr J F R di/dt = 100A/s Q Reverse Recovery Charge 78 120 nC rr 2 www.irf.com