PD - 95495 IRF3709PbF SMPS MOSFET IRF3709SPbF IRF3709LPBF Applications HEXFET Power MOSFET High Frequency Isolated DC-DC Converters with Synchronous Rectification V R max I DSS DS(on) D for Telecom and Industrial Use 30V 9.0m 90A High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Lead-Free Benefits Ultra-Low Gate Impedance 2 TO-220AB D Pak TO-262 Very Low RDS(on) at 4.5V V GS IRF3709 IRF3709S IRF3709L Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 90 D C GS I T = 100C Continuous Drain Current, V 10V 57 A D C GS I Pulsed Drain Current 360 DM P T = 25C Maximum Power Dissipation 120 W D C P T = 25C Maximum Power Dissipation 3.1 W D A Linear Derating Factor 0.96 mW/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.04 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB mount) 40 JA Notes through are on page 11 www.irf.com 1 07/01/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA (BR)DSS J D 6.4 9.0 V = 10V, I = 15A GS D R Static Drain-to-Source On-Resistance m DS(on) 7.4 10.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 20 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 100 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V I GS GSS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 53 S V = 15V, I = 30A fs DS D Q Total Gate Charge 27 41 I = 15A g D Q Gate-to-Source Charge 6.7 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 9.7 V = 5.0V gd GS Q Output Gate Charge 22 V = 0V, V = 10V oss GS DS t Turn-On Delay Time 11 V = 15V d(on) DD t Rise Time 171 I = 30A r D ns t Turn-Off Delay Time 21 R = 1.8 d(off) G t Fall Time 9.2 V = 4.5V f GS C Input Capacitance 2672 V = 0V iss GS C Output Capacitance 1064 pF V = 16V oss DS C Reverse Transfer Capacitance 109 = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 382 mJ AS I Avalanche Current 30 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 90 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 360 S (Body Diode) p-n junction diode. 0.88 1.3 V T = 25C, I = 30A, V = 0V J S GS V Diode Forward Voltage SD 0.82 T = 125C, I = 30A, V = 0V J S GS t Reverse Recovery Time 48 72 ns T = 25C, I = 30A, V =15V rr J F R Q Reverse Recovery Charge 46 69 nC di/dt = 100A/s rr t Reverse Recovery Time 48 72 ns T = 125C, I = 30A, V =15V rr J F R Q Reverse Recovery Charge 52 78 nC di/dt = 100A/s rr 2 www.irf.com