IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck V R max Qg Converters for Computer Processor Power DSS DS(on) Lead-Free 6.3m 30V 17nC Benefits Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage 2 TO-220AB D Pak TO-262 and Current IRF3709Z IRF3709ZS IRF3709ZL Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS 10V 87 I T = 25C Continuous Drain Current, V A GS D C I T = 100C Continuous Drain Current, V 10V 62 GS D C Pulsed Drain Current I 350 DM P T = 25C Maximum Power Dissipation 79 W D C P T = 100C Maximum Power Dissipation 40 D C Linear Derating Factor 0.53 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.89 C/W JC R 40 JA Junction-to-Ambient (PCB Mount) Notes through are on page 12 www.irf.com 1 6/30/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.021 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 5.0 6.3 V = 10V, I = 21A GS D 6.2 7.8 V = 4.5V, I = 17A GS D V Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.5 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 88 S V = 15V, I = 17A DS D Q Total Gate Charge 17 26 g Q Pre-Vth Gate-to-Source Charge 4.4 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.7 nC V = 4.5V gs2 GS Q gd Gate-to-Drain Charge 6.0 I = 17A D Q godr Gate Charge Overdrive 4.9 See Fig. 14a&b Q Switch Charge (Q + Q ) 7.7 sw gs2 gd Q Output Charge 11 nC V = 16V, V = 0V oss DS GS t Turn-On Delay Time 13 V = 15V, V = 4.5V d(on) DD GS t Rise Time 41 I = 17A r D t d(off) Turn-Off Delay Time 16 ns Clamped Inductive Load t f Fall Time 4.7 C Input Capacitance 2130 V = 0V iss GS C Output Capacitance 450 pF V = 15V oss DS C Reverse Transfer Capacitance 220 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 60 mJ Avalanche Current I A AR 17 Repetitive Avalanche Energy E 7.9 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions 87 D I S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 350 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 17A, V = 15V rr J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 6.2 9.3 nC 2 www.irf.com