Product Information

IRF3710ZLPBF

IRF3710ZLPBF electronic component of Infineon

Datasheet
International Rectifier MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

IRF3710ZLPBF
Infineon

1 : USD 4.6795
10 : USD 1.5969
100 : USD 1.2317
500 : USD 1.089
1000 : USD 0.8599
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

IRF3710ZLPBF
Infineon

1 : USD 3.2102
3 : USD 2.9091
6 : USD 1.2369
41 : USD 0.7966
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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The Infineon IRF3710ZLPBF is an advanced N-channel MOSFET designed for use in high-power switching applications. It features low on-state resistance and fast switching speeds, making it suitable for high current applications. It incorporates advanced ohmic-level frequency modulation technology to minimize switching fluctuations during high frequency operation and reduce switching losses during low current operation. Its low gate charge ensures fast and efficient power switching. The IRF3710ZLPBF is available in an 7.2 x 3.2 x 0.75mm package and operates over a temperature range of -40°C to +150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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