IRF3717PbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D Synchronous MOSFET for Notebook 4.4m V = 10V Processor Power 20V 20A GS Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D Ultra-Low Gate Impedance SO-8 Very Low R DS(on) Top View Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 20 D A I T = 70C Continuous Drain Current, V 10V GS 16 A D A Pulsed Drain Current I 160 DM P T = 25C Power Dissipation 2.5 W D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JL Junction-to-Drain Lead 20 C/W Junction-to-Ambient R JA 50 Notes through are on page 10 www.irf.com 1 8/10/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 3.7 4.4 V = 10V, I = 20A m GS D 4.8 5.7 V = 4.5V, I = 16A GS D V Gate Threshold Voltage 1.55 2.0 2.45 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.4 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 57 S V = 10V, I = 16A DS D Q g Total Gate Charge 22 33 Q Pre-Vth Gate-to-Source Charge 6.8 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 2.2 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 7.3 I = 16A gd D Q godr Gate Charge Overdrive 5.7 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 9.5 Q oss Output Charge 12 nC V = 10V, V = 0V DS GS t d(on) Turn-On Delay Time 12 V = 10V, V = 4.5V DD GS t r Rise Time 14 I = 16A D t Turn-Off Delay Time 15 ns Clamped Inductive Load d(off) t Fall Time 6.0 f C Input Capacitance 2890 V = 0V iss GS C oss Output Capacitance 930 pF V = 10V DS C rss Reverse Transfer Capacitance 430 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 32 mJ Avalanche Current I AR 16 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current 20 MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 160 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 16A, V = 0V J S GS t rr Reverse Recovery Time 22 32 ns T = 25C, I = 16A, V = 10V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 13 19 nC 2 www.irf.com