IRF3805STRL-7PP Infineon

Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V = 55V 175C Operating Temperature DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 2.6m G DS(on) Lead-Free S I = 160A D Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 240 A D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 170 C D GS I T = 25C 160 C Continuous Drain Current, V 10V (Package Limited) D GS I 1000 DM Pulsed Drain Current P T = 25C 300 W C Maximum Power Dissipation D Linear Derating Factor 2.0 W/C V 20 V GS Gate-to-Source Voltage E 440 mJ AS Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS 680 Single Pulse Avalanche Energy Tested Value I AR See Fig.12a,12b,15,16 A Avalanche Current E mJ AR Repetitive Avalanche Energy T Operating Junction and -55 to + 175 C J T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC 0.50 C/W Junction-to-Case R 0.50 CS Case-to-Sink, Flat, Greased Surface R JA Junction-to-Ambient 62 R JA 40 Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage55 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.05 V/C Reference to 25C, I = 1mA D R SMD Static Drain-to-Source On-Resistance V = 10V, I = 140A DS(on) 2.0 2.6 m GS D V GS(th) Gate Threshold Voltage2.04.0V V = V , I = 250A DS GS D gfs 110 S V = 25V, I = 140A Forward Transconductance DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 130200nC I = 140A D Q Gate-to-Source Charge 53 V = 44V gs DS Q gd Gate-to-Drain Mille) Charge 49 V = 10V GS t Turn-On Delay Time 23 ns V = 28V d(on) DD t r Rise Time 130 I = 140A D t d(off) Turn-Off Delay Time 80 R = 2.4 G t Fall Time 52 V = 10V f GS D L D Internal Drain Inductance 4.5 nH Between lead, 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C iss Input Capacitance 7820 pF V = 0V GS C Output Capacitance 1260 V = 25V oss DS C rss Reverse Transfer Capacitance 610 = 1.0MHz, See Fig. 5 C oss Output Capacitance 4310 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 980 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 1540 V = 0V, V = 0V to 44V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current 240 MOSFET symbol (Body Diode) A showing the I G SM Pulsed Source Current 1000 integral reverse S (Body Diode) p-n junction diode. V T = 25C, I = 140A, V = 0V SD Diode Forward Voltage 1.3 V J S GS t Reverse Recovery Time T = 25C, I = 140A, V = 28V rr 4568ns DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 35 53 nC Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax max. junction temperature. (See fig. 11). avalanche performance. Limited by T , starting T = 25C, Jmax J This value determined from sample failure population. 100% L=0.043mH, R = 25, I = 140A, V =10V. GS G AS tested to this value in production. 2 Part not recommended for use above this value. This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and C eff. is a fixed capacitance that gives the same oss soldering techniques refer to application note AN-994. charging time as C while V is rising from 0 to 80% oss DS R is measured at T of approximately 90C. J V . DSS Solder mounted on IMS substrate.