Typical Applications HEXFET Power MOSFET Industrial Motor Drive D V = 75V DSS Benefits Advanced Process Technology Ultra Low On-Resistance R = 0.007 DS(on) G Dynamic dv/dt Rating 175C Operating Temperature I = 106A D Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, low RJC, fast switching 2 D Pak TO-262 speed and improved repetitive avalanche rating. This IRF3808SPbF IRF3808LPbF combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRF3808LPbF TO-262 Tube 50 IRF3808LPbF Tube 50 IRF3808SPbF 2 IRF3808SPbF Tape and Reel Left 800 IRF3808STRLPbF D Pak Tape and Reel Right 800 IRF3808STRRPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 106 D C GS I T = 100C Continuous Drain Current, V 10V 75 A D C GS I Pulsed Drain Current 550 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 430 mJ AS I Avalanche Current 82 A AR E Repetitive Avalanche Energy See Fig.12a, 12b, 15, 16 mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 C/W JC R Junction-to-Ambient (PCB Mounted, Steady State) 40 JA IRF3808S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.086 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.9 7.0 m V = 10V, I = 82A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250 A GS(th) DS D g Forward Transconductance 100 S V = 25V, I = 82A fs DS D 20 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 60V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 150 220 I = 82A g D Q Gate-to-Source Charge 31 47 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 50 76 V = 10V gd GS t Turn-On Delay Time 16 V = 38V d(on) DD t Rise Time 140 I = 82A r D ns t Turn-Off Delay Time 68 R = 2.5 d(off) G t Fall Time 120 V = 10V f GS D Between lead, 4.5 L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 5310 V = 0V iss GS C Output Capacitance 890 pF V = 25V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5 rss C Output Capacitance 6010 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 570 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1140 V = 0V, V = 0V to 60V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 106 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 550 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 82A, V = 0V SD J S GS t Reverse Recovery Time 93 140 ns T = 25C, I = 82A rr J F Q Reverse RecoveryCharge 340 510 nC di/dt = 100A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Starting T = 25C, L = 0.130mH J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25, I = 82A. (See Figure 12). avalanche performance. G AS I 82A, di/dt 310A/ s, V V , When mounted on 1 square PCB ( FR-4 or G-10 Material ). SD DD (BR)DSS T 175C For recommended footprint and soldering techniques refer to J Pulse width 400s duty cycle 2%. application note AN-994.