PD- 90330G
IRF450
JANTX2N6770
JANTXV2N6770
500V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA)
Product Summary
Part Number BV RDS(on) I
DSS D
IRF450 500V 12A
0.400
TO-3 (TO-204AA)
Description Features
HEXFET MOSFET technology is the key to IR Hirel advanced
Repetitive Avalanche Ratings
line of power MOSFET transistors. The efficient geometry and
Dynamic dv/dt Rating
unique processing of this latest State of the Art design
Hermetically Sealed
achieves: very low on-state resistance combined with high trans
Simple Drive Requirements
conductance; superior reverse energy and diode recovery dv/dt
ESD Rating: Class 3A per MIL-STD-750,
capability.
Method 1020
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol Value
Parameter Units
I @ V = 10V, T = 25C Continuous Drain Current 12
D1 GS C
A
I @ V = 10V, T = 100C Continuous Drain Current 7.75
D2 GS C
I @T = 25C Pulsed Drain Current 48
DM C
P @T = 25C Maximum Power Dissipation 150 W
D C
Linear Derating Factor 1.2 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 8.0 mJ
AS
I Avalanche Current 12 A
AR
E Repetitive Avalanche Energy 15 mJ
AR
dv/dt Peak Diode Recovery 3.5 V/ns
T Operating Junction and
J
-55 to + 150
T Storage Temperature Range C
STG
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (Typical) g
For footnotes refer to the page 2.
1 2019-07-01
International Rectifier HiRel Products, Inc. IRF450
JANTX2N6770/JANTXV2N6770
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BV Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 1.0mA
DSS GS D
BV /T
DSS J Breakdown Voltage Temp. Coefficient 0.78 V/C Reference to 25C, I = 1.0mA
D
R
DS(on) 0.4 V = 10V, I = 7.75A
GS D2
Static Drain-to-Source On-Resistance
0.5 V = 10V, I = 12A
GS D1
V
GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
DS GS D
Gfs Forward Transconductance 5.5 S V = 15V, I = 7.75A
DS D2
I 25 V = 400V, V = 0V
DSS
DS GS
Zero Gate Voltage Drain Current A
250 V = 400V,V = 0V,T =125C
DS GS J
I Gate-to-Source Leakage Forward 100 V = 20V
GSS GS
nA
Gate-to-Source Leakage Reverse -100 V = -20V
GS
Q Total Gate Charge 55 120
I = 12A
G D1
Q Gate-to-Source Charge 5.0 19 V = 250V
GS nC DS
Q Gate-to-Drain (Miller) Charge 27 70 V = 10V
GD GS
t Turn-On Delay Time 35 = 250V
V
d(on) DD
tr Rise Time 190 I = 12A
D1
ns
t Turn-Off Delay Time 170
R = 2.35
d(off) G
t Fall Time 130 V = 10V
f GS
Measured from Drain lead (6mm /
0.25 in from package) to Source
Ls +L Total Inductance 6.1 nH
D
lead (6mm/ 0.25 in from package)
C Input Capacitance 2700 V = 0V
iss GS
C Output Capacitance 600 pF V = 25V
oss DS
C Reverse Transfer Capacitance 240 = 1.0MHz
rss
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter Min. Typ. Max. Units Test Conditions
I Continuous Source Current (Body Diode) 12
S
A
I Pulsed Source Current (Body Diode) 48
SM
V Diode Forward Voltage 1.7 V T = 25C,I = 12A, V = 0V
SD J S GS
t Reverse Recovery Time 1600 ns T = 25C,I = 12A,V 30V
rr J F DD
Q Reverse Recovery Charge 14 C di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
S D
on
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
R Junction-to-Case
0.83
JC
C/W
Junction-to-Ambient (Typical socket mount)
R
JA 30
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V = 50V, starting T = 25C, L= 0.111mH, Peak I = 12A,V = 10V.
DD J L GS
I 12A, di/dt 130A/s, V 500V, T 150C. Suggested R =2.35
SD DD J G
Pulse width 300 s; Duty Cycle 2%
2 2019-07-01
International Rectifier HiRel Products, Inc.