Advanced Process Technology D Ultra Low On-Resistance 150C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Some Parameters are Different from IRF5210S/L S P-Channel Lead-Free D D Features of this design are a 150C junction operating temperature, fast switching speed and S S improved repetitive avalanche rating . These fea- D D G tures combine to make this design an extremely G 2 efficient and reliable device for use in a wide D Pak TO-262 variety of other applications. IRF5210LPbF IRF5210SPbF GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units I T = 25C -38 A C Continuous Drain Current, V -10V D GS I T = 100C -24 D C Continuous Drain Current, VGS -10V I -140 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 3.1 W D A P T = 25C Maximum Power Dissipation 170 D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E AS Single Pulse Avalanche Energy 120 mJ Avalanche Current I -23 A AR Repetitive Avalanche Energy E AR 17 mJ Peak Diode Recovery dv/dt dv/dt -7.4 V/ns T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case C/W 0.75 R 40 JA Junction-to-Ambient (PCB Mount, steady state) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage-100 V V = 0V, I = -250A (BR)DSS GS D V / T DSS J Breakdown Voltage Temp. Coefficient -0.11 V/C Reference to 25C, I = -1mA D R DS(on) Static Drain-to-Source On-Resistance 60 V = 10V, I = -38A m GS D V Gate Threshold Voltage-2.0-4.0V V = V , I = -250A GS(th) DS GS D gfs Forward Transconductance 9.5 S V = -50V, I = -23A DS D I Drain-to-Source Leakage Current -50 A V = -100V, V = 0V DSS DS GS -250 V = -80V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage-100 V = -20V GS Q g Total Gate Charge 150230nC I = -23A D Q gs Gate-to-Source Charge 22 33 V = -80V DS Q Gate-to-Drain Mille) Charge81120 V = -10V gd GS t d(on) Turn-On Delay Time 14 ns V = -50V DD t Rise Time 63 I = -23A r D t d(off) Turn-Off Delay Time 72 R = 2.4 G t f Fall Time 55 V = -10V GS L D Internal Drain Inductance 4.5 nH Between lead, 6mm (0.25in.) L S Internal Source Inductance 7.5 from package and center of die contact C iss Input Capacitance 2780 pF V = 0V GS C oss Output Capacitance 800 V = -25V DS C Reverse Transfer Capacitance 430 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current -38 MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current -140 integral reverse (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = -23A, V = 0V SD -1.6 V J S GS t Reverse Recovery Time T = 25C, I = -23A, V = -25V rr 170 260 ns DD J F Q Reverse Recovery Charge 1180 1770 nC di/dt = -100A/s rr t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 6 1 4 7 8 9 : 6* 3 0 <0 = 3 % & ()*+ , & - . : >2 0 & ( + / & 0 12 3 I 0 12+ 0-( 2 4 + 5 5 + SD % ( )* 2 www.irf.com