IRF530NSTRLPBF Infineon

IRF530NSTRLPBF electronic component of Infineon
IRF530NSTRLPBF Infineon
IRF530NSTRLPBF MOSFETs
IRF530NSTRLPBF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRF530NSTRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF530NSTRLPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRF530NSTRLPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 100V 17A (Tc) 4V @ 250uA 90 mΩ @ 9A,10 TO-263-2 RoHS
Datasheet: IRF530NSTRLPBF Datasheet (PDF)
Price (USD)
1: USD 1.0414 ea
Line Total: USD 1.04 
Availability : 2916
  
Ship by Thu. 27 Nov to Wed. 03 Dec
QtyUnit Price
1$ 1.0414
10$ 0.8398
30$ 0.5635
100$ 0.4326
500$ 0.3134
800$ 0.2947

Availability 8057
Ship by Tue. 25 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4375
10$ 0.9348
100$ 0.6974
500$ 0.6611
800$ 0.5291
2400$ 0.5148
9600$ 0.5082


Availability 776
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 0.6565
2400$ 0.6187
3200$ 0.6125
8000$ 0.6062
12000$ 0.5938


Availability 348
Ship by Tue. 25 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.498
10$ 1.1704
30$ 0.6566
81$ 0.6202
1600$ 0.5964


Availability 2916
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0414
10$ 0.8398
30$ 0.5635
100$ 0.4326
500$ 0.3134
800$ 0.2947


Availability 1552
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 0.5226
2400$ 0.5055
9600$ 0.5053


Availability 8878
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 305
Multiples : 1
QtyUnit Price
305$ 0.8541
527$ 0.494
539$ 0.4826


Availability 1358
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 182
Multiples : 1
QtyUnit Price
182$ 1.4334
190$ 1.3693
250$ 1.3143
500$ 1.2181
1000$ 1.1784

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF530NSTRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF530NSTRLPBF and other electronic components in the MOSFETs category and beyond.

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The IRF530NSTRLPBF is a MOSFET N Trench N-channel transistor with a 5V drain to source breakdown voltage and a low 4V gate threshold voltage. It is manufactured by Infineon and is rated for a max drain current of 17A (Tc), a gate charge of 250 uA, an on-resistance of 90 mO @ 9A, and an operating temperature range of 10 to +263°C. This part is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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