PD- 95160A IRF5803D2PbF FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K Ideal For Buck Regulator Applications V = -40V DSS 2 7 A K P-Channel HEXFET Low V Schottky Rectifier 3 6 F R = 112m S D DS(on) SO-8 Footprint 4 5 G D Lead-Free Schottky Vf = 0.51V Top View Description TM The FETKY family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings (T = 25C Unless Otherwise Noted) A Parameter Maximum Units I T = 25C Continuous Drain Current, V -10V -3.4 A D A GS I T = 70C Continuous Drain Current, V -10V -2.7 D A GS I Pulsed Drain Current -27 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead, MOSFET 20 JL R Junction-to-Ambient , MOSFET 62.5 C/W JA R Junction-to-Ambient , SCHOTTKY 62.5 JA Notes: Repetitive rating pulse width limited by max. junction temperature (see fig. 11) Pulse width 400s duty cycle 2% Surface mounted on 1 inch square copper board, t 10sec. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -40 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.03 V/C Reference to 25C, I = -1mA (BR)DSS J D 112 V = -10V, I = -3.4A GS D R Static Drain-to-Source On-Resistance DS(on) m 190 V = -4.5V, I = -2.7A GS D V Gate Threshold Voltage -1.0 -3.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 4.0 S V = -10V, I = -3.4A fs DS D -10 V = -32V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -32V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 25 37 I = -3.4A g D Q Gate-to-Source Charge 4.5 6.8 nC V = -20V gs DS Q Gate-to-Drain Mille) Charge 3.5 5.3 V = -10V, See Fig. 6 & 14 gd GS t Turn-On Delay Time 43 65 V = -20V d(on) DD t Rise Time 550 825 I = -1.0A r D t Turn-Off Delay Time 88 130 R = 6.0 d(off) G t Fall Time 50 75 V = -10V, f GS C Input Capacitance 1110 V = 0V iss GS C Output Capacitance 93 pF V = -25V oss DS C Reverse Transfer Capacitance 73 = 100kHz, See Fig. 5 rss MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current(Body Diode) -2.0 S I Pulsed Source Current (Body Diode) -27 SM V Body Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time (Body Diode) 27 40 ns T = 25C, I = -2.0A rr J F Q Reverse Recovery Charge 34 50 nC di/dt = 100A/s rr Schottky Diode Maximum Ratings Parameter Max. Units Conditions If (av) Max. Average Forward Current 3.0 50% Duty Cycle. Rectangular Waveform, T =30C A See Fig.21 I Max. peak one cycle Non-repetitive 340 5s sine or 3s Rect. pulse Following any rated SM Surge current 70 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Parameter Max. Units Conditions Vfm Max. Forward Voltage Drop 0.51 If = 5.0A, Tj = 25C 0.63 If = 10A, Tj = 25C 0.44 If = 5.0A, Tj = 125C 0.59 If = 10A, Tj = 125C Vrrm Max. Working Peak Reverse Voltage 40 Irm Max. Reverse Leakage Current 3.0 mA Vr = 40V Tj = 25C 37 Tj = 125C Ct Max. Junction Capacitance 405 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25C 2 www.irf.com