IRF5806PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET V R max I DSS DS(on) D Surface Mount -20V 86m V = -4.5V -4.0A GS Available in Tape & Reel 147m V = -2.5V -3.0A GS Low Gate Charge Lead-Free Halogen-Free Description A 1 6 D These P-channel MOSFETs from International Rectifier D utilize advanced processing techniques to achieve the 2 extremely low on-resistance per silicon area. This 5 D D benefit provides the designer with an extremely efficient device for use in battery and load management 3 4 G S applications. The TSOP-6 package with its customized leadframe Top View TSOP-6 produces a HEXFET power MOSFET with R DS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It s unique thermal design and R DS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage -20 V DS I T = 25C Continuous Drain Current, V -4.5V -4.0 D A GS I T = 70C Continuous Drain Current, V -4.5V -3.3 A D A GS I Pulsed Drain Current -16.5 DM P T = 25C Maximum Power Dissipation 2.0 W D A P T = 70C Maximum Power Dissipation 1.3 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 62.5 C/W JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.011 V/C Reference to 25C, I = -1mA (BR)DSS J D 47.1 86 V = -4.5V, I = -4.0A GS D R Static Drain-to-Source On-Resistance m DS(on) 67.5 147 V = -2.5V, I = -3.0A GS D V Gate Threshold Voltage -0.45 -1.2 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 6.4 S V = -10V, I = -4.0A fs DS D -15 V = -16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 8.3 11.4 I = -4.0A g D Q Gate-to-Source Charge 1.2 nC V = -16V gs DS Q Gate-to-Drain Mille) Charge 2.6 V = -4.5V gd GS t Turn-On Delay Time 6.2 9.3 V = -10V, V = -4.5V d(on) DD GS t Rise Time 27 41 I = -1.0A r D t Turn-Off Delay Time 94 140 R = 6.0 d(off) G t Fall Time 126 190 R = 10 f D C Input Capacitance 594 V = 0V iss GS C Output Capacitance 114 pF V = -15V oss DS C Reverse Transfer Capacitance 87 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.0 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -16.5 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 116 174 ns T = 25C, I = -2.0A rr J F Q Reverse Recovery Charge 90 135 nC di/dt = -100A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square Copper board, 10sec max. junction temperature. Pulse width 300s duty cycle 2 www.irf.com