PD - 94033
HEXFET POWER MOSFET IRF5NJ5305
SURFACE MOUNT (SMD-0.5)
55V, P-CHANNEL
Product Summary
Part Number BV RDS(on) ID
DSS
IRF5NJ5305 -55V 0.065 -22A*
Fifth Generation HEXFET power MOSFETs from
SMD-0.5
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
Features:
per silicon unit area. This benefit, combined with the
Low RDS(on)
fast switching speed and ruggedized device design
Avalanche Energy Ratings
that HEXFET power MOSFETs are well known for,
Dynamic dv/dt Rating
provides the designer with an extremely efficient device
for use in a wide variety of applications. Simple Drive Requirements
Ease of Paralleling
These devices are well-suited for applications such
Hermetically Sealed
as switching power supplies, motor controls, invert-
Surface Mount
ers, choppers, audio amplifiers and high-energy pulse
Light Weight
circuits.
Absolute Maximum Ratings
Parameter Units
I @ V = -10V, T = 25C Continuous Drain Current -22*
D GS C
A
I @ V = -10V, T = 100C Continuous Drain Current -16
D GS C
I Pulsed Drain Current -88
DM
P @ T = 25C Max. Power Dissipation 75 W
D C
Linear Derating Factor 0.6 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 160 mJ
AS
I Avalanche Current -16 A
AR
E Repetitive Avalanche Energy 7.5 mJ
AR
dv/dt Peak Diode Recovery dv/dt 2.8 V/ns
T Operating Junction -55 to 150
J
o
T Storage Temperature Range C
STG
Package Mounting Surface Temperature 300 (for 5 s)
Weight 1.0 (Typical) g
* Current is limited by package
For footnotes refer to the last page
www.irf.com 1
11/10/00IRF5NJ5305
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250 A
DSS GS D
BV / T Temperature Coefficient of Breakdown -0.049 V/C Reference to 25C, I = -1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 0.065 V = 10V, I = -16A
DS(on) GS D
Resistance
V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250 A
GS(th) DS GS D
g Forward Transconductance 8.0 S ( )V = -25V, I = -16A
fs DS DS
I Zero Gate Voltage Drain Current -25 V = -55V ,V =0V
DSS DS GS
A
-250 V = -44V,
DS
V = 0V, T =125C
GS J
I Gate-to-Source Leakage Forward -100 V = -20V
GSS GS
nA
I Gate-to-Source Leakage Reverse 100 V = 20V
GSS GS
Q Total Gate Charge 70 V =-10V, I = -16A
g GS D
Q Gate-to-Source Charge 17 nC V = -44V
gs DS
Q Gate-to-Drain (Miller) Charge 30
gd
t Turn-On Delay Time 26 V = -28V, I = -16A,
d(on) DD D
t Rise Time 125 R = 6.8
r G
ns
t Turn-Off Delay Time 56
d(off)
t Fall Time 74
f
L + L Total Inductance 4.0
S D Measured from the center of
nH
drain pad to center of source pad
C Input Capacitance 1290 V = 0V, V = -25V
iss GS DS
C Output Capacitance 495 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 203
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) -22*
S
A
I Pulse Source Current (Body Diode) -88
SM
V Diode Forward Voltage -1.3 V T = 25C, I = -16A, V = 0V
SD j S GS
t Reverse Recovery Time 100 ns T = 25C, I = -16A, di/dt 100A/ s
rr j F
Q Reverse Recovery Charge 250 nC V -30V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
* Current is limited by package
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction-to-Case 1.67 C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com