X-On Electronics has gained recognition as a prominent supplier of IRF640NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF640NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF640NPBF Infineon

IRF640NPBF electronic component of Infineon
IRF640NPBF Infineon
IRF640NPBF MOSFETs
IRF640NPBF  Semiconductors

Images are for reference only
See Product Specifications
Part No. IRF640NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRF640NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4518 ea
Line Total: USD 2.26 
Availability - 61357
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
49481
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 550
Multiples : 1
550 : USD 0.494
1250 : USD 0.481
4000 : USD 0.4375

61357
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 5
Multiples : 5
5 : USD 0.4518
50 : USD 0.3642
150 : USD 0.2163
500 : USD 0.1941
2300 : USD 0.1763
4600 : USD 0.1675

238
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 2.072
10 : USD 1.561
25 : USD 1.2474
28 : USD 0.6748
77 : USD 0.6384

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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We are delighted to provide the IRF640NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF640NPBF and other electronic components in the MOSFETs category and beyond.

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The IRF640NPBF is a N-Channel MOSFET manufactured by Infineon. This device has a 200V drain-to-source voltage presentation and is capable of continuous drain current up to 18A. The maximum gate-to-source voltage is 4V with a minimal gate current of 250uA and a typical RDS(on) of 150 mO @ 11A, 10V. The packaging is TO-220-3 (RoHS compliant).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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