IRF6623PbF IRF6623TRPbF RoHS Compliant DirectFET Power MOSFET Lead-Free (Qualified up to 260C Reflow) V R max Qg(typ.) DSS DS(on) Application Specific MOSFETs 20V 5.7m V = 10V 11nC GS Ideal for CPU Core DC-DC Converters 9.7m V = 4.5V GS Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description TM The IRF6623PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac- turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for param- eters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter Max. Units V 20 Drain-to-Source Voltage V DS 20 V Gate-to-Source Voltage GS I T = 25C Continuous Drain Current, V 10V 55 GS D C 16 I T = 25C Continuous Drain Current, V 10V A GS D A Continuous Drain Current, V 10V 13 I T = 70C A GS D Pulsed Drain Current 120 I DM P T = 25C Power Dissipation 42 D C 1.4 P T = 25C Power Dissipation W D A 2.1 P T = 70C Power Dissipation A D E Single Pulse Avalanche Energy 43 mJ AS I Avalanche Current 40 A AR 0.017 Linear Derating Factor W/C Operating Junction and -40 to + 150 C T J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient 58 JA R Junction-to-Ambient 12.5 JA R Junction-to-Ambient 20 C/W JA R Junction-to-Case 3.0 JC R Junction-to-PCB Mounted 1.0 J-PCB Notes through are on page 2 www.irf.com 1 5/3/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 15 mV/C Reference to 25C, I = 1mA DSS J D R m Static Drain-to-Source On-Resistance 4.4 5.7 V = 10V, I = 15A DS(on) GS D 7.5 9.7 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.4 2.2 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.4 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 34 S V = 10V, I = 12A DS D Q Total Gate Charge 11 17 g Q Pre-Vth Gate-to-Source Charge 3.3 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 1.2 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 4.0 I = 12A gd D Q Gate Charge Overdrive 2.5 See Fig. 16 godr Q Switch Charge (Q + Q ) 5.2 sw gs2 gd Q Output Charge 8.9 nC V = 10V, V = 0V oss DS GS t Turn-On Delay Time 9.7 V = 16V, V = 4.5V d(on) DD GS t Rise Time 40 = 12A I r D t Turn-Off Delay Time 12 ns Clamped Inductive Load d(off) t Fall Time 4.5 f C Input Capacitance 1360 V = 0V iss GS C Output Capacitance 630 pF V = 10V oss DS C Reverse Transfer Capacitance 240 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 53 MOSFET symbol S D (Body Diode) A showing the G I Pulsed Source Current 120 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.81 1.0 V T = 25C, I = 12A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 12A rr J F Q Reverse Recovery Charge 12 18 nC di/dt = 100A/s rr Mounted on minimum footprint full size board with metalized Repetitive rating pulse width limited by back and with small clip heatsink. max. junction temperature. Starting T = 25C, L = 0.61mH, T measured with thermal couple mounted to top (Drain) of C J R = 25, I = 12A. part. G AS Pulse width 400s duty cycle 2%. R is measured at Surface mounted on 1 in. square Cu board. Click on this section to link to the appropriate technical paper. Used double sided cooling, mounting pad. Click on this section to link to the DirectFET Website. 2 www.irf.com