IRF6668PbF IRF6668TRPbF DirectFET Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260C Reflow) R V V DS(on) Application Specific MOSFETs DSS GS Ideal for High Performance Isolated Converter 80V max 20V max 12m 10V Primary Switch Socket Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for Synchronous Rectification 22nC 7.8nC 1.6nC 40nC 12nC 4.0V Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MZ Description TM The IRF6668PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(10%) or 36V-60V ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Parameter Max. Units V 80 Drain-to-Source Voltage V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 55 I T = 25C C GS D Continuous Drain Current, V 10V 44 A I T = 70C GS D C I Pulsed Drain Current 170 DM E 24 Single Pulse Avalanche Energy mJ AS I Avalanche Current 23 A AR 60 12.0 I = 12A I = 12A D D 50 V = 64V 10.0 DS V = 40V DS 40 8.0 30 6.0 T = 125C J 20 4.0 10 2.0 T = 25C J 0 0.0 4 6 8 10 12 14 16 02468 1012141618202224 Q , Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.088mH, R = 25, I = 23A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 08/28/06 Typical R (m) DS(on) V , Gate-to-Source Vo ltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 80 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.097 V/C D DSS J R V = 10V, I = 12A Static Drain-to-Source On-Resistance 12 15 m GS D DS(on) V = V , I = 100A V Gate Threshold Voltage 3.0 4.0 4.9 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -11 mV/C GS(th) J V = 80V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 64V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 12A gfs Forward Transconductance 22 S DS D Q Total Gate Charge 22 31 g Q V = 40V Pre-Vth Gate-to-Source Charge 4.8 DS gs1 V = 10V Q Post-Vth Gate-to-Source Charge 1.6 nC gs2 GS Q I = 12A Gate-to-Drain Charge 7.8 12 gd D Q Gate Charge Overdrive 7.8 See Fig. 15 godr Q Switch Charge (Q + Q ) 9.4 sw gs2 gd Q V = 16V, V = 0V Output Charge 12 nC DS GS oss R Gate Resistance 1.0 G(Internal) t V = 40V, V = 10V Turn-On Delay Time 19 DD GS d(on) I = 12A t Rise Time 13 r D t R = 6.2 Turn-Off Delay Time 7.1 ns d(off) G t Fall Time 23 See Fig. 16 & 17 f C V = 0V Input Capacitance 1320 iss GS = 25V C V Output Capacitance 310 pF DS oss C Reverse Transfer Capacitance 76 = 1.0MHz rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 81 MOSFET symbol S showing the (Body Diode) A I Pulsed Source Current 170 integral reverse SM (Body Diode) p-n junction diode. V T = 25C, I = 12A, V = 0V Diode Forward Voltage 1.3 V J S GS SD T = 25C, I = 12A t Reverse Recovery Time 34 51 ns rr J F Q di/dt = 100A/s See Fig. 18 Reverse Recovery Charge 40 60 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com