IRF6678 DirectFET Power MOSFET RoHS compliant containing no lead or bormide V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 30V max 20V max 1.7m 10V 2.3m 4.5V Dual Sided Cooling Compatible Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Ultra Low Package Inductance 43nC 15nC 4.0nC 46nC 28nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for SyncFET Socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with Existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT Description TM The IRF6678 combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including R and gate charge to minimize losses in the SyncFET socket. DS(on) Absolute Maximum Ratings Parameter Max. Units V 30 Drain-to-Source Voltage V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 30 I T = 25C GS D A Continuous Drain Current, V 10V 24 A I T = 70C A GS D I T = 25C Continuous Drain Current, V 10V 150 GS D C 240 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 210 mJ AS I Avalanche Current 24 A AR 20 6.0 I = 29A I = 23A D D 5.0 V = 24V DS 15 V = 15V DS 4.0 10 3.0 2.0 T = 125C 5 J 1.0 T = 25C J 0 0.0 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Gate Voltage Click on this section to link to the appropriate technical paper. Starting T = 25C, L = 0.75mH, R = 25, I = 23A. J G AS Click on this section to link to the DirectFET MOSFETs. Surface mounted on 1 in. square Cu board, steady state. Repetitive rating pulse width limited by max. junction temperature. T measured with thermocouple mounted to top (Drain) of part. C www.irf.com 1 02/28/06 T ica yp l R (m ) D on S( ) V , Gate-to-So urce Voltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 24 mV/C D DSS J R V = 10V, I = 30A Static Drain-to-Source On-Resistance 1.7 2.2 m GS D DS(on) V = 4.5V, I = 24A 2.3 3.0 GS D V V = V , I = 250A Gate Threshold Voltage 1.35 2.25 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -6.3 mV/C GS(th) J I V = 24V, V = 0V Drain-to-Source Leakage Current 1.0 A DSS DS GS V = 24V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I = 24A gfs Forward Transconductance 100 S DS D Q Total Gate Charge 43 65 g V = 15V Q Pre-Vth Gate-to-Source Charge 12 gs1 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 4.0 nC GS gs2 I = 24A Q Gate-to-Drain Charge 15 gd D Q Gate Charge Overdrive 12 See Fig. 17 godr Q Switch Charge (Q + Q ) 19 sw gs2 gd V = 16V, V = 0V Q Output Charge 28 nC oss DS GS R Gate Resistance 1.0 2.2 G V = 16V, V = 4.5V t Turn-On Delay Time 21 d(on) DD GS t I = 24A Rise Time 71 ns D r t Turn-Off Delay Time 27 Clamped Inductive Load d(off) t Fall Time 8.1 f V = 0V C Input Capacitance 5640 GS iss C V = 15V Output Capacitance 1260 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 570 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 89 S (Body Diode) A showing the I integral reverse Pulsed Source Current 240 SM p-n junction diode. (Body Diode) V T = 25C, I = 24A, V = 0V Diode Forward Voltage 0.78 1.2 V SD J S GS t T = 25C, I = 24A Reverse Recovery Time 43 65 ns J F rr Q Reverse Recovery Charge 46 69 nC di/dt = 100A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com